NSVBC114EPDXV6T1G

NSVBC114EPDXV6T1G

  • Part Number NSVBC114EPDXV6T1G
  • Manufacturer ON Semiconductor
  • Description TRANS NPN/PNP BIAS SOT563
  • Lead Free / RoHS
    lead rohs
Part Number

NSVBC114EPDXV6T1G

Manufacturer

ON Semiconductor

Description

TRANS NPN/PNP BIAS SOT563

Lead Free / RoHS
lead rohs
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Specification
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 10 kOhms
Current - Collector (Ic) (Max): 100mA
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Power - Max: 500mW
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 4 Weeks
Frequency - Transition: -
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector Cutoff (Max): 500nA