NSVBC114EPDXV6T1G
ON Semiconductor
TRANS NPN/PNP BIAS SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
---|---|
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | SOT-563 |
Resistor - Emitter Base (R2): | 10 kOhms |
Current - Collector (Ic) (Max): | 100mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Power - Max: | 500mW |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 4 Weeks |
Frequency - Transition: | - |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | - |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector Cutoff (Max): | 500nA |