R17A
onsemi
-
Transition Frequency (fT) | 300MHz |
---|---|
Operating Temperature | -55u2103~+150u2103@(Tj) |
Collector Cut-Off Current (Icbo) | 5u03bcA |
Transistor Type | NPN |
DC Current Gain (hFE@Ic,Vce) | 100@10mA,1V |
Power Dissipation (Pd) | 350mW |
Collector Current (Ic) | 200mA |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@50mA,5mA |
Collector-Emitter Breakdown Voltage (Vceo) | 40V |