h632
Infineon Technologies
-
Transition Frequency (fT) | 46GHz |
---|---|
Operating Temperature | +150u2103@(Tj) |
Collector Cut-Off Current (Icbo) | 1nA |
Transistor Type | NPN |
DC Current Gain (hFE@Ic,Vce) | 180@30mA,3V |
Power Dissipation (Pd) | 200mW |
Collector Current (Ic) | 50mA |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | - |
Collector-Emitter Breakdown Voltage (Vceo) | 4V |