- Part Number RN2908FE(TE85L,F)
- Manufacturer Toshiba Semiconductor and Storage
- Description TRANS 2PNP PREBIAS 0.1W ES6
-
Lead Free / RoHS
Part Number
RN2908FE(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2PNP PREBIAS 0.1W ES6
Lead Free / RoHS
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Specification
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
|---|---|
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | ES6 |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Current - Collector (Ic) (Max): | 100mA |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
| Resistor - Base (R1): | 22 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Power - Max: | 100mW |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Frequency - Transition: | 200MHz |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Series: | - |
| Other Names: | RN2908FE(TE85LF)TR |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |