2SA949-Y(TE6,F,M)
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
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Package / Case: | TO-226-3, TO-92-3 Long Body |
Mounting Type: | Through Hole |
Packaging: | Bulk |
Supplier Device Package: | TO-92MOD |
Current - Collector (Ic) (Max): | 50mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Bipolar (BJT) Transistor PNP 150V 50mA 120MHz 800mW Through Hole TO-92MOD |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Power - Max: | 800mW |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Frequency - Transition: | 120MHz |
Vce Saturation (Max) @ Ib, Ic: | 800mV @ 1mA, 10A |
Series: | - |
Other Names: | 2SA949-Y(TE6FM) 2SA949YTE6FM |
Transistor Type: | PNP |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Operating Temperature: | 150°C (TJ) |