- Part Number SI3585DV-T1-E3
- Manufacturer Vishay
- Description MOSFET N/P-CH 20V 2A 6-TSOP
-
Lead Free / RoHS
Part Number
SI3585DV-T1-E3
Manufacturer
Vishay
Description
MOSFET N/P-CH 20V 2A 6-TSOP
Lead Free / RoHS
Stock & Pricing
| Stock | 1000 | 100 | 1 | Action |
|---|---|---|---|---|
| in stock | $0.75 | $0.87 | $1.15 |
- Stock in stock
-
1000
$0.75
-
100
$0.87
-
1
$1.15
Request Quotation
Specification
| Drain to Source Voltage (Vdss): | 20V |
|---|---|
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | 6-TSOP |
| Vgs(th) (Max) @ Id: | 600mV @ 250µA (Min) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP |
| FET Feature: | Logic Level Gate |
| Power - Max: | 830mW |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| FET Type: | N and P-Channel |
| Series: | TrenchFET® |
| Current - Continuous Drain (Id) @ 25°C: | 2A, 1.5A |
| Base Part Number: | SI3585 |
| Other Names: | SI3585DV-T1-E3CT |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Rds On (Max) @ Id, Vgs: | 125 mOhm @ 2.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |