- Part Number SI7998DP-T1-GE3
- Manufacturer Vishay
- Description MOSFET 2N-CH 30V 25A PPAK SO-8
-
Lead Free / RoHS
Part Number
SI7998DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET 2N-CH 30V 25A PPAK SO-8
Lead Free / RoHS
Stock & Pricing
| Stock | 15000 | 6000 | 3000 | 1000 | 500 | 100 | 10 | 1 | Action |
|---|---|---|---|---|---|---|---|---|---|
| in stock | $0.35681 | $0.37075 | $0.39026 | $0.41814 | $0.52964 | $0.64116 | $0.8226 | $0.918 |
- Stock in stock
-
15000
$0.35681
-
6000
$0.37075
-
3000
$0.39026
-
1000
$0.41814
-
500
$0.52964
-
100
$0.64116
-
10
$0.8226
-
1
$0.918
Request Quotation
Specification
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Package / Case: | PowerPAK® SO-8 Dual |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | PowerPAK® SO-8 Dual |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | Mosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual |
| FET Feature: | Logic Level Gate |
| Power - Max: | 22W, 40W |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| FET Type: | 2 N-Channel (Dual) |
| Series: | TrenchFET® |
| Current - Continuous Drain (Id) @ 25°C: | 25A, 30A |
| Other Names: | SI7998DP-T1-GE3CT |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 15V |
| Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |