DMN2016LHAB-7
Diodes Incorporated
MOSFET 2N-CH 20V 7.5A 6UDFN
Stock | 300000 | 30000 | 24000 | 18000 | 15000 | 9000 | Action |
---|---|---|---|---|---|---|---|
in stock | $0.14322 | $0.14553 | $0.14784 | $0.15362 | $0.1888 | $0.2034 |
Drain to Source Voltage (Vdss): | 20V |
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Package / Case: | 6-UDFN Exposed Pad |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | U-DFN2030-6 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7.5A 1.2W Surface Mount U-DFN2030-6 |
FET Feature: | Logic Level Gate |
Power - Max: | 1.2W |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 20 Weeks |
FET Type: | 2 N-Channel (Dual) Common Drain |
Series: | - |
Current - Continuous Drain (Id) @ 25°C: | 7.5A |
Other Names: | DMN2016LHAB-7DITR |
Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 10V |
Rds On (Max) @ Id, Vgs: | 15.5 mOhm @ 4A, 4.5V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |