RN1132MFV,L3F

RN1132MFV,L3F

Part Number RN1132MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F VESM TRANSISTOR PD 150M
Lead Free / RoHS

Part Number

RN1132MFV,L3F

Manufacturer

Toshiba Semiconductor and Storage

Description

X34 PB-F VESM TRANSISTOR PD 150M

Lead Free / RoHS

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Specification

DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 5V
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Supplier Device Package:	VESM
Current - Collector (Ic) (Max):	100mA
Lead Free Status / RoHS Status:	Lead free / RoHS Compliant
Detailed Description:	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Resistor - Base (R1):	200 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Power - Max:	150mW
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 5mA
Series:	-
Other Names:	RN1132MFVL3F
Transistor Type:	NPN - Pre-Biased
Current - Collector Cutoff (Max):	100nA (ICBO)