- Part Number RN1102MFV,L3F
- Manufacturer Toshiba Semiconductor and Storage
- Description TRANS PREBIAS NPN 50V 0.15W VESM
-
Lead Free / RoHS
Part Number
RN1102MFV,L3F
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 50V 0.15W VESM
Lead Free / RoHS
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Specification
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
|---|---|
| Package / Case: | SOT-723 |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | VESM |
| Resistor - Emitter Base (R2): | 10 kOhms |
| Current - Collector (Ic) (Max): | 100mA |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
| Resistor - Base (R1): | 10 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Power - Max: | 150mW |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Series: | - |
| Other Names: | RN1102MFV(TL3T)CT RN1102MFV(TL3T)CT-ND RN1102MFVL3F(BCT RN1102MFVL3F(BCT-ND RN1102MFVL3FCT |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector Cutoff (Max): | 500nA |