FJN3315RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 10mA, 5V |
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Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Mounting Type: | Through Hole |
Packaging: | Bulk |
Supplier Device Package: | TO-92-3 |
Resistor - Emitter Base (R2): | 10 kOhms |
Current - Collector (Ic) (Max): | 100mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3 |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Power - Max: | 300mW |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Frequency - Transition: | 250MHz |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | - |
Transistor Type: | NPN - Pre-Biased |
Current - Collector Cutoff (Max): | 100nA (ICBO) |