FJV4102RMTF
ON Semiconductor
TRANS PREBIAS PNP 200MW SOT23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
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Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Packaging: | Cut Tape (CT) |
Supplier Device Package: | SOT-23-3 (TO-236) |
Resistor - Emitter Base (R2): | 10 kOhms |
Current - Collector (Ic) (Max): | 100mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236) |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Power - Max: | 200mW |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Frequency - Transition: | 200MHz |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | - |
Base Part Number: | FJV4102 |
Other Names: | FJV4102RMTFCT |
Transistor Type: | PNP - Pre-Biased |
Current - Collector Cutoff (Max): | 100nA (ICBO) |