1T4
onsemi
-
Transition Frequency (fT) | 3MHz |
---|---|
Operating Temperature | -65u2103~+150u2103@(Tj) |
Collector Cut-Off Current (Icbo) | - |
Transistor Type | NPN |
DC Current Gain (hFE@Ic,Vce) | 10@3A,4V |
Power Dissipation (Pd) | 15W |
Collector Current (Ic) | 3A |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.2V@3A,375mA |
Collector-Emitter Breakdown Voltage (Vceo) | 40V |