NSVBC124EPDXV6T1G
ON Semiconductor
SS SOT563 DUAL RSTR XSTR
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
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Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-563 |
Resistor - Emitter Base (R2): | 22 kOhms |
Current - Collector (Ic) (Max): | 100mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 339W Surface Mount SOT-563 |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Power - Max: | 339W |
Manufacturer Standard Lead Time: | 10 Weeks |
Frequency - Transition: | - |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | Automotive, AEC-Q101 |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector Cutoff (Max): | 500nA |