IRFHM8342TRPBF
Infineon Technologies
MOSFET N-CH 30V 10A 8PQFN
Stock | 1000 | 500 | 100 | 25 | 1 | Action |
---|---|---|---|---|---|---|
in stock | $0.10446 | $0.11058 | $0.1155 | $0.12042 | $0.12288 |
Drain to Source Voltage (Vdss): | 30V |
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Power Dissipation (Max): | 2.6W (Ta), 20W (Tc) |
Package / Case: | 8-PowerTDFN |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | 8-PQFN (3.3x3.3), Power33 |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 30V 10A (Ta) 2.6W (Ta), 20W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
FET Type: | N-Channel |
Series: | HEXFET® |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Other Names: | IRFHM8342TRPBFTR SP001551976 |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 25V |
Vgs (Max): | ±20V |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 17A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |