FQPF12N60CT
ON Semiconductor
MOSFET N-CH 600V 12A TO-220F
Drain to Source Voltage (Vdss): | 600V |
---|---|
Power Dissipation (Max): | 51W (Tc) |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Packaging: | Tube |
Supplier Device Package: | TO-220F |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 600V 12A (Tc) 51W (Tc) Through Hole TO-220F |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
FET Type: | N-Channel |
Series: | QFET® |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds: | 2290pF @ 25V |
Vgs (Max): | ±30V |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 6A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |