- Part Number FQD2N80TM_WS
- Manufacturer ON Semiconductor
- Description MOSFET N-CH 800V 1.8A DPAK
-
Lead Free / RoHS
Part Number
FQD2N80TM_WS
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 800V 1.8A DPAK
Lead Free / RoHS
Stock & Pricing
Request Quotation
Specification
| Drain to Source Voltage (Vdss): | 800V |
|---|---|
| Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | D-Pak |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| FET Type: | N-Channel |
| Series: | QFET® |
| Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
| Vgs (Max): | ±30V |
| Rds On (Max) @ Id, Vgs: | 6.3 Ohm @ 900mA, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |