- Part Number RS1E200BNTB
- Manufacturer LAPIS Semiconductor
- Description MOSFET N-CH 30V 20A 8HSOP
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Lead Free / RoHS
Part Number
RS1E200BNTB
Manufacturer
LAPIS Semiconductor
Description
MOSFET N-CH 30V 20A 8HSOP
Lead Free / RoHS
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Specification
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Power Dissipation (Max): | 3W (Ta), 25W (Tc) |
| Package / Case: | 8-PowerTDFN |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | 8-HSOP |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 40 Weeks |
| FET Type: | N-Channel |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
| Other Names: | RS1E200BNTBTR |
| Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 15V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 20A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
| Operating Temperature: | 150°C (TJ) |