- Part Number IPB80N06S2L06ATMA2
- Manufacturer Infineon Technologies
- Description MOSFET N-CH 55V 80A TO263-3
-
Lead Free / RoHS
Part Number
IPB80N06S2L06ATMA2
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 55V 80A TO263-3
Lead Free / RoHS
Stock & Pricing
| Stock | 2000 | 1000 | 500 | 100 | 10 | 1 | Action |
|---|---|---|---|---|---|---|---|
| in stock | $1.66 | $1.73989 | $2.06302 | $2.4234 | $2.958 | $3.29 |
- Stock in stock
-
2000
$1.66
-
1000
$1.73989
-
500
$2.06302
-
100
$2.4234
-
10
$2.958
-
1
$3.29
Request Quotation
Specification
| Drain to Source Voltage (Vdss): | 55V |
|---|---|
| Power Dissipation (Max): | 250W (Tc) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | PG-TO263-3-2 |
| Vgs(th) (Max) @ Id: | 2V @ 180µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| FET Type: | N-Channel |
| Series: | OptiMOS™ |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Other Names: | IPB80N06S2L06ATMA2CT |
| Input Capacitance (Ciss) (Max) @ Vds: | 3800pF @ 25V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 69A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |