SSM6N58NU,LF
Toshiba Semiconductor and Storage
MOSFET 2N-CH 30V 4A UDFN6
Drain to Source Voltage (Vdss): | 30V |
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Package / Case: | 6-WDFN Exposed Pad |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | 6-UDFN (2x2) |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Mosfet Array 2 N-Channel (Dual) 30V 4A 1W Surface Mount 6-UDFN (2x2) |
FET Feature: | Logic Level Gate, 1.8V Drive |
Power - Max: | 1W |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
FET Type: | 2 N-Channel (Dual) |
Series: | - |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Other Names: | SSM6N58NU,LF(B SSM6N58NU,LF(T SSM6N58NULF SSM6N58NULFTR |
Input Capacitance (Ciss) (Max) @ Vds: | 129pF @ 15V |
Rds On (Max) @ Id, Vgs: | 84 mOhm @ 2A, 4.5V |
Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 4.5V |
Operating Temperature: | 150°C (TJ) |