- Part Number PHM25NQ10T,518
- Manufacturer NXP Semiconductors
- Description MOSFET N-CH 100V 30.7A 8HVSON
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Lead Free / RoHS
Part Number
PHM25NQ10T,518
Manufacturer
NXP Semiconductors
Description
MOSFET N-CH 100V 30.7A 8HVSON
Lead Free / RoHS
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Specification
| Drain to Source Voltage (Vdss): | 100V |
|---|---|
| Power Dissipation (Max): | 62.5W (Tc) |
| Package / Case: | 8-VDFN Exposed Pad |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | 8-HVSON (6x5) |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 100V 30.7A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5) |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| FET Type: | N-Channel |
| Series: | TrenchMOS™ |
| Current - Continuous Drain (Id) @ 25°C: | 30.7A (Tc) |
| Other Names: | 934057309518 PHM25NQ10T /T3 PHM25NQ10T /T3-ND |
| Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 20V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 10A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 26.6nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |