APTM100A13SG
Microsemi
MOSFET 2N-CH 1000V 65A SP6
Drain to Source Voltage (Vdss): | 1000V (1kV) |
---|---|
Package / Case: | SP6 |
Mounting Type: | Chassis Mount |
Packaging: | Bulk |
Supplier Device Package: | SP6 |
Vgs(th) (Max) @ Id: | 5V @ 6mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 65A 1250W Chassis Mount SP6 |
FET Feature: | Standard |
Power - Max: | 1250W |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 32 Weeks |
FET Type: | 2 N-Channel (Half Bridge) |
Series: | - |
Current - Continuous Drain (Id) @ 25°C: | 65A |
Other Names: | APTM100A13SGMI APTM100A13SGMI-ND |
Input Capacitance (Ciss) (Max) @ Vds: | 15200pF @ 25V |
Rds On (Max) @ Id, Vgs: | 156 mOhm @ 32.5A, 10V |
Gate Charge (Qg) (Max) @ Vgs: | 562nC @ 10V |
Operating Temperature: | -40°C ~ 150°C (TJ) |