2DB1
Diodes Incorporated
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Transition Frequency (fT) | 300MHz |
---|---|
Operating Temperature | -55u2103~+150u2103@(Tj) |
Transistor Type | PNP |
DC Current Gain (hFE@Ic,Vce) | 270@100mA,2V |
Power Dissipation (Pd) | 300mW |
Collector Current (Ic) | 1A |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 180mV@500mA,25mA |
Collector-Emitter Breakdown Voltage (Vceo) | 30V |