DTD123TSTP
LAPIS Semiconductor
TRANS PREBIAS NPN 300MW SPT
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
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Package / Case: | SC-72 Formed Leads |
Mounting Type: | Through Hole |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | SPT |
Current - Collector (Ic) (Max): | 500mA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 500mA 200MHz 300mW Through Hole SPT |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Power - Max: | 300mW |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Frequency - Transition: | 200MHz |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Series: | - |
Base Part Number: | DTD123 |
Transistor Type: | NPN - Pre-Biased |
Current - Collector Cutoff (Max): | 500nA (ICBO) |